1 dual n-channel 60-v (d-s) mosfet features ? haloge n-fre e according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 175 c maximum junction temperature ? 100 % r g tested ? compl iant to rohs directive 2002/95/ec product su m mary v ds (v) r ds(o n) ( )i d (a) q g (typ.) 60 0.035 at v gs = 10 v 7.0 9.2 nc 0.040 at v gs = 4.5 v 5.8 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 t op v ie w 2 3 4 1 n-channel mosfet g 1 d 1 s 1 n-channel mosfet g 2 d 2 s 2 notes: a. surfa c e mou nted on 1" x 1" fr4 board. b. t = 10 s. c. rework co nditions: manual soldering with a sol dering iron is not recommended for leadless components. d. maximum under steady state conditions is 110 c /w. absolute maximum ratings t a = 25 c, unless otherwise noted pa ramet e r symbol limit u nit dr ain-source voltage v ds 60 v gate -source v oltage v gs 20 contin uous d r ain current (t j = 150 c ) t c = 25 c i d 7.0 a t c = 70 c 5.5 t a = 25 c 5.3 a, b t a = 70 c 4.4 a, b pulsed dra i n current i dm 30 contin uous sou r ce drain diode current t c = 25 c i s 3.1 t a = 25 c 2 a, b a valanche current l = 0 1 mh i as 12 single-pulse a valanche energy e as 7.2 m j max imum power dissipation t c = 25 c p d 3.7 w t c = 70 c 2.6 t a = 25 c 2.4 a, b t a = 70 c 1.7 a, b oper ating junction and storage temperature range t j , t stg - 55 to 175 c thermal resist ance rat ings p arameter symb ol t ypical maximum uni t maxim um junction-to-ambient a, c t 10 s r thja 50 6 2.5 c /w maximum junction-to-foot (drain) steady state r thjf 33 41 www.din-tek.jp dt m4 9 4 6
2 not e s: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications t j = 25 c, unless otherwise noted p aram eter symb ol test conditions min. typ. max. un it static drain-source breakdown v oltage v ds v gs = 0 v , i d = 250 a 60 v v ds temper ature coefficient ' v ds /t j i d = 250 a 53 mv/c v gs(t h) t emper ature coefficient ' v gs(th) /t j - 6.7 gate-s o urce threshold voltage v gs(th) v ds = v gs , i d = 25 0 a 1.0 2.4 3.0 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 a v ds = 60 v , v gs = 0 v, t j = 55 c 10 on-state drain current a i d(o n ) v ds t 5 v, v gs = 10 v 30 a drain-source on-state re sista nce a r ds(on) v gs = 10 v , i d = 5.3 a 0.023 0.035 : v gs = 4. 5 v, i d = 4.7 a 0.031 0.04 forward transconductance a g fs v ds = 15 v , i d = 5.3 a 24 s dynam i c b input capacita n ce c is s v ds = 30 v, v gs = 0 v, f = 1 mhz 840 pf output capacitance c oss 71 rev erse t ransfer capacitance c rss 44 to tal gate charge q g v ds = 30 v, v gs = 10 v, i d = 5.3 a 17 25 nc v ds = 30 v , v gs = 5 v, i d = 5.3 a 9.2 12 gate-s o urce charge q gs 3.3 gate-dr a in charge q gd 3.7 g a te re sistance r g f = 1 mhz 3.1 6.5 9.5 : tu r n - o n d e l ay t i m e t d(on) v dd = 3 0 v , r l = 6. 8 : i d # 4.4 a , v gen = 4.5 v , r g = 1 : 20 30 ns rise time t r 120 180 t ur n-off delay time t d( off) 20 30 fa l l time t f 30 45 tu r n - o n d e l ay t i m e t d(on) v dd = 3 0 v , r l = 6. 8 : i d # 4.4 a, v gen = 10 v, r g = 1 : 10 15 rise time t r 12 20 t ur n-off delay time t d(off) 25 40 fa l l time t f 10 15 drain- so urce body diode characteristics continuous source-drain diode current i s t c = 25 c 3.1 a pulse diod e f orward current a i sm 30 body diode v oltage v sd i s = 2 a 0.8 1.2 v body diode re verse recovery time t rr i f = 4 . 4 a, di/dt = 100 a/s, t j = 25 c 25 50 ns body diode reverse recovery charge q rr 25 50 n c reverse recovery fall time t a 18 ns rev erse reco very rise time t b 7 z z z g l q w h n m s ' 7 0
3 typica l c har acteristics 25 c, unless otherwise noted outp ut c haracteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 10 v thr u 5 v 4 v v ds - dr ain-to-source voltage (v) - dr ain current (a) i d 3 v 0.000 0.020 0.040 0.060 0.080 0.100 0 5 10 15 20 25 30 v gs = 10 v i d - drain current (a) v gs = 4.5 v r ds( on) - on-resistance (m ) 0 2 4 6 8 10 0 4 8 12 16 20 i d = 5.3 a - gate-to-source v oltage (v) q g - t otal gate charge (nc) v gs v ds = 48 v v ds = 30 v transfer ch aracteristics cap acitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 c t c = 150 c - 55 c v gs - gate-to-source v oltage (v) - drain current (a) i d 0 200 400 600 800 1000 1200 0 1 02 030405060 c rss c oss c iss v ds - dr ain-to-source voltage (v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 175 v gs = 10 v t j - j unction temperature (c) r ds( on) - on-resistance (nor maliz ed) v gs = 4.5 v i d = 5.3 a www.din-tek.jp dt m4 9 4 6
4 ty pi cal ch aracteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 1.0 1.4 1 10 30 0 0.2 0.4 0.6 0.8 t j = 175 c v sd - source-to-dr ain voltage (v) - source current (a) i s 1.2 t j = 25 c 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a t j - t emperature (c) v gs(t h ) (v) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.08 0.10 02468 1 0 i d = 5.3 a v gs - gate-to-source v oltage (v) r ds( on) - drain-to-source on-resistance ( ) t j = 25 c t j = 150 c 0 15 25 5 10 po w er (w) t ime (s) 20 10 1000 1 0.1 0.01 100 safe oper a ting area, junction-to-ambient 100 1 0.01 1 10 100 0.01 10 - dr ain current (a) i d 0.1 0.1 1 ms 10 ms 100 ms limited by r ds( on) * v ds - dr ain-to-source voltage (v) * v gs > minim um v gs at which r ds( on) is specified t a = 25 c single pulse 100 s dc 10 s 1 s www.din-tek.jp dt m4 9 4 6
5 typica l c har acteristics 25 c, unless otherwise noted * th e power dissipation p d is ba se d on t j(max) = 175 c , using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 175 i d - dr ain current (a) t c - case t emperature (c) power, ju nct ion-to-case 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175 t c - case t emperature (c) p o w er (w) single pu lse avalanche capability 100 0.000001 0.001 1 10 0.0001 t a - time in a v alanche (s) i c - p eak a valanche current (a) t a = l i d bv - v dd 0.00001 www.din-tek.jp dt m4 9 4 6
6 ty pi cal ch aracteristics 25 c, unless otherwise noted normalized t h ermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square w ave pulse duration (s) normalized ef fective transient thermal impedance 1. duty cycle , d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z thja (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 duty cycle = 0.5 square w ave pulse duration (s) normaliz ed ef fective transient thermal impedance 0.02 0.05 single pulse www.din-tek.jp dt m4 9 4 6
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
1 disclaimer all product, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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